Infineon RF Bipolar Transistor, 250 mA NPN, 5 V, 4-Pin SOT-89
- RS stock no.:
- 216-8357
- Mfr. Part No.:
- BFQ790H6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 1000 units)*
R 20 232,00
(exc. VAT)
R 23 267,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 7,000 unit(s) shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 20.232 | R 20,232.00 |
| 2000 - 2000 | R 19.726 | R 19,726.00 |
| 3000 + | R 19.135 | R 19,135.00 |
*price indicative
- RS stock no.:
- 216-8357
- Mfr. Part No.:
- BFQ790H6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 250mA | |
| Maximum Collector Emitter Voltage Vceo | 5V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 6.1V | |
| Maximum Transition Frequency ft | 1.85GHz | |
| Maximum Power Dissipation Pd | 1.5W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.5mm | |
| Length | 4.5mm | |
| Height | 2mm | |
| Series | BFQ790 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 250mA | ||
Maximum Collector Emitter Voltage Vceo 5V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 6.1V | ||
Maximum Transition Frequency ft 1.85GHz | ||
Maximum Power Dissipation Pd 1.5W | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.5mm | ||
Length 4.5mm | ||
Height 2mm | ||
Series BFQ790 | ||
Automotive Standard No | ||
The Infineon BFQ series is a single stage high linearity and high gain driver amplifier based on NPN silicon germanium technology. It is used in commercial and industrial wireless infrastructure, ISM band medium power amplifiers and drivers, automated test equipment, UHF television, CATV and DBS.
High gain
High maximum RF input power
High compression point
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