Infineon RF Bipolar Transistor, 250 mA NPN, 5 V, 4-Pin SOT-89

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Subtotal (1 reel of 1000 units)*

R 20 631,00

(exc. VAT)

R 23 726,00

(inc. VAT)

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  • 7,000 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
1000 - 1000R 20.631R 20,631.00
2000 - 2000R 20.115R 20,115.00
3000 +R 19.512R 19,512.00

*price indicative

RS stock no.:
216-8357
Mfr. Part No.:
BFQ790H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

250mA

Maximum Collector Emitter Voltage Vceo

5V

Package Type

SOT-89

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

6.1V

Maximum Power Dissipation Pd

1.5W

Maximum Emitter Base Voltage VEBO

2V

Maximum Transition Frequency ft

1.85GHz

Minimum Operating Temperature

-55°C

Minimum DC Current Gain hFE

60

Transistor Polarity

NPN

Pin Count

4

Maximum Operating Temperature

150°C

Height

2mm

Series

BFQ790

Standards/Approvals

No

Length

4.5mm

Automotive Standard

No

The Infineon BFQ series is a single stage high linearity and high gain driver amplifier based on NPN silicon germanium technology. It is used in commercial and industrial wireless infrastructure, ISM band medium power amplifiers and drivers, automated test equipment, UHF television, CATV and DBS.

High gain

High maximum RF input power

High compression point

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