Infineon BFQ790H6327XTSA1 RF Bipolar Transistor, 250 mA NPN, 5 V, 4-Pin SOT-89

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Subtotal (1 pack of 5 units)*

R 146,69

(exc. VAT)

R 168,695

(inc. VAT)

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  • 7,070 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 5R 29.338R 146.69
10 - 95R 28.604R 143.02
100 - 245R 27.746R 138.73
250 - 495R 26.636R 133.18
500 +R 25.57R 127.85

*price indicative

Packaging Options:
RS stock no.:
216-8358
Mfr. Part No.:
BFQ790H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

250mA

Maximum Collector Emitter Voltage Vceo

5V

Package Type

SOT-89

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

6.1V

Maximum Power Dissipation Pd

1.5W

Minimum DC Current Gain hFE

60

Transistor Polarity

NPN

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

2V

Maximum Transition Frequency ft

1.85GHz

Pin Count

4

Maximum Operating Temperature

150°C

Length

4.5mm

Series

BFQ790

Standards/Approvals

No

Height

2mm

Automotive Standard

No

The Infineon BFQ series is a single stage high linearity and high gain driver amplifier based on NPN silicon germanium technology. It is used in commercial and industrial wireless infrastructure, ISM band medium power amplifiers and drivers, automated test equipment, UHF television, CATV and DBS.

High gain

High maximum RF input power

High compression point

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