onsemi BDX33BG Digital Transistor, 80 V dc NPN Through Hole TO-220, 3-Pin

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Subtotal (1 pack of 10 units)*

R 130,29

(exc. VAT)

R 149,83

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 13.029R 130.29
20 +R 12.703R 127.03

*price indicative

Packaging Options:
RS stock no.:
186-7894
Mfr. Part No.:
BDX33BG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Package Type

TO-220

Maximum Collector Emitter Voltage Vceo

80V dc

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

80V dc

Maximum Power Dissipation Pd

70W

Minimum DC Current Gain hFE

750

Maximum Emitter Base Voltage VEBO

5V dc

Transistor Polarity

NPN

Maximum Operating Temperature

150°C

Pin Count

3

Length

10.53mm

Standards/Approvals

No

Height

9.28mm

Automotive Standard

No

COO (Country of Origin):
CN
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0

Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C

Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C

Monolithic Construction with Build-In Base-Emitter Shunt resistors

TO-220AB Compact Package

Pb-Free Packages are Available

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