onsemi Digital Transistor, 80 V dc NPN Through Hole TO-220, 3-Pin

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Subtotal (1 tube of 50 units)*

R 661,95

(exc. VAT)

R 761,25

(inc. VAT)

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Temporarily out of stock
  • 50 unit(s) shipping from 24 June 2026
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Units
Per unit
Per Tube*
50 - 200R 13.239R 661.95
250 - 450R 12.908R 645.40
500 - 1200R 12.521R 626.05
1250 - 2450R 12.02R 601.00
2500 +R 11.539R 576.95

*price indicative

RS stock no.:
186-7366
Mfr. Part No.:
BDX33BG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Package Type

TO-220

Maximum Collector Emitter Voltage Vceo

80V dc

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

80V dc

Maximum Emitter Base Voltage VEBO

5V dc

Minimum DC Current Gain hFE

750

Transistor Polarity

NPN

Maximum Power Dissipation Pd

70W

Maximum Operating Temperature

150°C

Pin Count

3

Height

9.28mm

Standards/Approvals

No

Length

10.53mm

Automotive Standard

No

COO (Country of Origin):
CN
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0

Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C

Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C

Monolithic Construction with Build-In Base-Emitter Shunt resistors

TO-220AB Compact Package

Pb-Free Packages are Available

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