Vishay SMF12A-E3-08, Uni-Directional TVS Diode, 200W, 2-Pin DO-219AB
- RS stock no.:
- 180-7954
- Mfr. Part No.:
- SMF12A-E3-08
- Manufacturer:
- Vishay
41975 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 25)
R 2,054
(exc. VAT)
R 2,362
(inc. VAT)
| Units | Per unit | Per Pack* |
| 25 - 75 | R 2,054 | R 51,35 |
| 100 - 475 | R 2,003 | R 50,075 |
| 500 - 975 | R 1,943 | R 48,575 |
| 1000 + | R 1,865 | R 46,625 |
| *price indicative | ||
- RS stock no.:
- 180-7954
- Mfr. Part No.:
- SMF12A-E3-08
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Vishay TVS Diode
The Vishay SMF DO-219AB package, surface mount ESD protected unidirectional TVS diode has a breakdown voltage rating of 13.3V and peak pulse current rating of10.1A.
Features and Benefits
• 200W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.01%
• ESD capability: human body model: class H3B > 8 kV
• ESD immunity ±30kV contact discharge and ±30kV air discharge
• Excellent clamping capability
• Fast response time
• Halogen free
• Low incremental surge resistance
• Low-Noise technology
• Low-profile package
• Operating junction temperature ranges between -65°C and 175°C
• Wave and reflow solderable
• ESD capability: human body model: class H3B > 8 kV
• ESD immunity ±30kV contact discharge and ±30kV air discharge
• Excellent clamping capability
• Fast response time
• Halogen free
• Low incremental surge resistance
• Low-Noise technology
• Low-profile package
• Operating junction temperature ranges between -65°C and 175°C
• Wave and reflow solderable
Applications
• Automotive load dump
• Sensitive electronics protections like ICs, MOSFET, signal lines of sensor units for consumers, computers, industries and telecommunication
• Sensitive electronics protections like ICs, MOSFET, signal lines of sensor units for consumers, computers, industries and telecommunication
Certifications
• AEC-Q101 qualified
• Automotive Grade
• e3
• IEC 61000-4-2
• J-STD-020
• UL 94 V-0 listed
• Automotive Grade
• e3
• IEC 61000-4-2
• J-STD-020
• UL 94 V-0 listed
Specification
Attribute | Value |
|---|---|
| Diode Configuration | Single |
| Direction Type | Uni-Directional |
| Maximum Clamping Voltage | 19.9V |
| Minimum Breakdown Voltage | 13.3V |
| Mounting Type | Surface Mount |
| Package Type | DO-219AB |
| Pin Count | 2 |
| Peak Pulse Power Dissipation | 200W |
| Number of Elements per Chip | 1 |