onsemi Switching Diode, Single, 23.4 A, 3-Pin 650 V TO-252
- RS stock no.:
- 202-7285
- Mfr. Part No.:
- FFSD2065B
- Manufacturer:
- onsemi
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS stock no.:
- 202-7285
- Mfr. Part No.:
- FFSD2065B
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Forward Current If | 23.4A | |
| Diode Configuration | Single | |
| Product Type | Switching Diode | |
| Sub Type | Silicon Carbide (SiC) Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 763A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Power Dissipation Pd | 160mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Forward Current If 23.4A | ||
Diode Configuration Single | ||
Product Type Switching Diode | ||
Sub Type Silicon Carbide (SiC) Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 763A | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Power Dissipation Pd 160mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 10.41mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
The ON Semiconductor silicon carbide (Sic) Schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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