onsemi Switching Diode, Single, 23.4 A, 3-Pin 650 V TO-252
- RS stock no.:
- 202-7285
- Mfr. Part No.:
- FFSD2065B
- Manufacturer:
- onsemi
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS stock no.:
- 202-7285
- Mfr. Part No.:
- FFSD2065B
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Switching Diode | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 23.4A | |
| Mount Type | Surface | |
| Sub Type | Silicon Carbide (SiC) Schottky Diode | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 160mW | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 763A | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Switching Diode | ||
Diode Configuration Single | ||
Maximum Forward Current If 23.4A | ||
Mount Type Surface | ||
Sub Type Silicon Carbide (SiC) Schottky Diode | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 160mW | ||
Peak Non-Repetitive Forward Surge Current Ifsm 763A | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Height 10.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
The ON Semiconductor silicon carbide (Sic) Schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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