Intelligent Memory IM5116SDBBBG-6I SDRAM 512 MB Surface, 54-Pin 16 bit FBGA
- RS stock no.:
- 588-656
- Mfr. Part No.:
- IM5116SDBBBG-6I
- Manufacturer:
- Intelligent Memory
Subtotal (1 unit)*
R 184,27
(exc. VAT)
R 211,91
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 + | R 184.27 |
*price indicative
- RS stock no.:
- 588-656
- Mfr. Part No.:
- IM5116SDBBBG-6I
- Manufacturer:
- Intelligent Memory
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Memory Size | 512MB | |
| Product Type | SDRAM | |
| Organisation | 32M x 16 | |
| Data Bus Width | 16bit | |
| Address Bus Width | 13bit | |
| Number of Bits per Word | 16 | |
| Maximum Clock Frequency | 166MHz | |
| Maximum Random Access Time | 6ns | |
| Number of Words | 33554432 Words | |
| Mount Type | Surface | |
| Package Type | FBGA | |
| Pin Count | 54 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Width | 8 mm | |
| Length | 8mm | |
| Height | 1.2mm | |
| Series | IM5116SDBB | |
| Standards/Approvals | RoHS | |
| Minimum Supply Voltage | 3V | |
| Maximum Supply Voltage | 3.6V | |
| Automotive Standard | AEC-Q100 | |
| Supply Current | 140mA | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Memory Size 512MB | ||
Product Type SDRAM | ||
Organisation 32M x 16 | ||
Data Bus Width 16bit | ||
Address Bus Width 13bit | ||
Number of Bits per Word 16 | ||
Maximum Clock Frequency 166MHz | ||
Maximum Random Access Time 6ns | ||
Number of Words 33554432 Words | ||
Mount Type Surface | ||
Package Type FBGA | ||
Pin Count 54 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Width 8 mm | ||
Length 8mm | ||
Height 1.2mm | ||
Series IM5116SDBB | ||
Standards/Approvals RoHS | ||
Minimum Supply Voltage 3V | ||
Maximum Supply Voltage 3.6V | ||
Automotive Standard AEC-Q100 | ||
Supply Current 140mA | ||
The Intelligent Memory Four bank Synchronous DRAM is organized as 4 banks x 8Mbit x 16. It achieves high-speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and synchronizes the output data to the system clock. All control, address, data input, and output circuits are synchronized with the positive edge of an externally supplied clock to ensure precise timing and reliable performance.
Power down mode
Auto refresh and self refresh
Automatic and controlled precharge command
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