Infineon 4 V 130 mA Diode 3-Pin SOT-323 BAT1704WH6327XTSA1

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Subtotal (1 pack of 50 units)*

R 162,30

(exc. VAT)

R 186,65

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50R 3.246R 162.30
100 - 100R 3.165R 158.25
150 - 200R 3.07R 153.50
250 - 450R 2.947R 147.35
500 +R 2.829R 141.45

*price indicative

Packaging Options:
RS stock no.:
261-3927
Distrelec Article No.:
304-41-636
Mfr. Part No.:
BAT1704WH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Diode

Mount Type

Surface

Package Type

SOT-323

Maximum Continuous Forward Current If

130mA

Peak Reverse Repetitive Voltage Vrrm

4V

Diode Configuration

Series

Series

BAT17-04W

Pin Count

3

Peak Reverse Current Ir

0.25μA

Maximum Forward Voltage Vf

0.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC47/20/22

Height

0.9mm

Length

2.1mm

Automotive Standard

AEC-Q101

The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.

RoHS compliant and halogen-free

Low capacitance and inductance

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