Infineon 4 V 130 mA Diode 3-Pin SOT-323 BAT1704WH6327XTSA1
- RS stock no.:
- 261-3927
- Distrelec Article No.:
- 304-41-636
- Mfr. Part No.:
- BAT1704WH6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
R 143,55
(exc. VAT)
R 165,10
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 2.871 | R 143.55 |
| 100 - 100 | R 2.799 | R 139.95 |
| 150 - 200 | R 2.715 | R 135.75 |
| 250 - 450 | R 2.607 | R 130.35 |
| 500 + | R 2.502 | R 125.10 |
*price indicative
- RS stock no.:
- 261-3927
- Distrelec Article No.:
- 304-41-636
- Mfr. Part No.:
- BAT1704WH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | SOT-323 | |
| Maximum Continuous Forward Current If | 130mA | |
| Peak Reverse Repetitive Voltage Vrrm | 4V | |
| Diode Configuration | Series | |
| Series | BAT17-04W | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 600mV | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 250nA | |
| Maximum Operating Temperature | 150°C | |
| Width | 2mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 2.1mm | |
| Height | 900μm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type SOT-323 | ||
Maximum Continuous Forward Current If 130mA | ||
Peak Reverse Repetitive Voltage Vrrm 4V | ||
Diode Configuration Series | ||
Series BAT17-04W | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 600mV | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 250nA | ||
Maximum Operating Temperature 150°C | ||
Width 2mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 2.1mm | ||
Height 900μm | ||
Automotive Standard AEC-Q101 | ||
The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.
RoHS compliant and halogen-free
Low capacitance and inductance
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