Infineon 650 V 8 A Rectifier & Schottky Diode 5-Pin PG-VSON-4 IDL08G65C5XUMA2
- RS stock no.:
- 258-0969
- Mfr. Part No.:
- IDL08G65C5XUMA2
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 unit)*
R 61,69
(exc. VAT)
R 70,94
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 61.69 |
| 10 - 99 | R 60.15 |
| 100 - 249 | R 58.35 |
| 250 - 499 | R 56.02 |
| 500 + | R 53.78 |
*price indicative
- RS stock no.:
- 258-0969
- Mfr. Part No.:
- IDL08G65C5XUMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface | |
| Package Type | PG-VSON-4 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDL08G65C5 | |
| Pin Count | 5 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 43A | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface | ||
Package Type PG-VSON-4 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDL08G65C5 | ||
Pin Count 5 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 43A | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
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