Infineon 650 V 4 A Diode 2-Pin D2PAK IDK04G65C5XTMA2

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Subtotal (1 pack of 2 units)*

R 80,81

(exc. VAT)

R 92,932

(inc. VAT)

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  • 998 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 40.405R 80.81
10 - 98R 39.395R 78.79
100 - 248R 38.215R 76.43
250 - 498R 36.685R 73.37
500 +R 35.22R 70.44

*price indicative

Packaging Options:
RS stock no.:
258-0958
Mfr. Part No.:
IDK04G65C5XTMA2
Manufacturer:
Infineon
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Brand

Infineon

Mount Type

Surface

Product Type

Diode

Package Type

TO-263

Maximum Continuous Forward Current If

4A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

IDK04G65C5

Pin Count

2

Minimum Operating Temperature

-55°C

Peak Non-Repetitive Forward Surge Current Ifsm

215A

Maximum Forward Voltage Vf

2.2V

Peak Reverse Current Ir

500μA

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC1, RoHS

Automotive Standard

No

The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.

Revolutionary semiconductor material - Silicon Carbide

Benchmark switching behaviour

No reverse recovery/ No forward recovery

Temperature independent switching behaviour

Enabling higher frequency / increased power density solutions

Higher system reliability due to lower operating temperatures

Reduced EMI

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