Infineon 650 V 20 A Rectifier & Schottky Diode 3-Pin TO-247
- RS stock no.:
- 249-6936
- Mfr. Part No.:
- IDW20G65C5XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 2 100,09
(exc. VAT)
R 2 415,09
(inc. VAT)
Add 30 units to get free delivery
In Stock
- 90 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 70.003 | R 2,100.09 |
| 60 - 60 | R 68.253 | R 2,047.59 |
| 90 + | R 66.206 | R 1,986.18 |
*price indicative
- RS stock no.:
- 249-6936
- Mfr. Part No.:
- IDW20G65C5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | XDW20G65 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 103A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | and JESD22, J-STD20, JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series XDW20G65 | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 103A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals and JESD22, J-STD20, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new. It has more compact design and thin-wafer technology.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
High surge current capability
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC1 for target applications
Optimized for high temperature operation
Related links
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