STMicroelectronics 650 V 12 A Diode 3-Pin D2PAK STPSC12065G2-TR
- RS stock no.:
- 229-2098
- Mfr. Part No.:
- STPSC12065G2-TR
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 152,16
(exc. VAT)
R 174,98
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 76.08 | R 152.16 |
| 10 - 98 | R 74.18 | R 148.36 |
| 100 - 248 | R 71.955 | R 143.91 |
| 250 - 498 | R 69.075 | R 138.15 |
| 500 + | R 66.31 | R 132.62 |
*price indicative
- RS stock no.:
- 229-2098
- Mfr. Part No.:
- STPSC12065G2-TR
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC12065 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 50μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 220A | |
| Maximum Forward Voltage Vf | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 28.25mm | |
| Height | 4.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC12065 | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 50μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 220A | ||
Maximum Forward Voltage Vf 1.65V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 28.25mm | ||
Height 4.4mm | ||
Automotive Standard No | ||
The STMicroelectronics STPSC12065 is the SiC diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a schottky diode structure with a 650 V rating.
No or negligible reverse recovery
Switching behaviour independent of temperature
Dedicated to PFC applications
High forward surge capability
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