Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247

Image representative of range

Bulk discount available

Subtotal (1 tube of 30 units)*

R 3 509,91

(exc. VAT)

R 4 036,41

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 30 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 60R 116.997R 3,509.91
90 - 120R 114.072R 3,422.16
150 +R 110.65R 3,319.50

*price indicative

RS stock no.:
222-4843
Mfr. Part No.:
IDWD30G120C5XKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

SiC Diode

Mount Type

Surface

Package Type

TO-247

Maximum Continuous Forward Current If

30A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Series

5th Generation CoolSiC 1200V Schottky Diode

Rectifier Type

Schottky

Pin Count

2

Peak Non-Repetitive Forward Surge Current Ifsm

240A

Maximum Forward Voltage Vf

1.65V

Peak Reverse Current Ir

248μA

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

15.8 mm

Length

40.21mm

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

Related links