Infineon 1.2 kV 10 A Diode SiC Schottky 3-Pin TO-247 IDW10G120C5BFKSA1
- RS stock no.:
- 222-4833
- Mfr. Part No.:
- IDW10G120C5BFKSA1
- Manufacturer:
- Infineon
Image representative of range
Get a bulk buy discount
Add 90 more to save 2%
View bulk pricing optionsSubtotal (1 tube of 30 units)*
R 1 990,17
(exc. VAT)
R 2 288,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 210 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 30 - 60 | R 66.339 | R 1,990.17 | - |
| 90 - 120 | R 64.681 | R 1,940.43 | 2% |
| 150 + | R 62.74 | R 1,882.20 | 5% |
*price indicative
- RS stock no.:
- 222-4833
- Mfr. Part No.:
- IDW10G120C5BFKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Diode | |
| Mount Type | SMD | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Series | 5th Generation CoolSiCTM | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Maximum Forward Voltage Vf | 2.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Width | 5.21mm | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Diode | ||
Mount Type SMD | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Series 5th Generation CoolSiCTM | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Maximum Forward Voltage Vf 2.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Width 5.21mm | ||
Length 16.13mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
Related links
- Infineon 1.2 kV 10 A Diode SiC Schottky 3-Pin TO-247 IDW10G120C5BFKSA1
- Infineon 1.2 kV 8 A Diode SiC Schottky 3-Pin TO-247 IDM08G120C5XTMA1
- Infineon 1.2 kV 40 A Diode SiC Schottky 2-Pin TO-247 IDW40G120C5BFKSA1
- Infineon 1.2 kV 10 A Diode Schottky 2-Pin TO-247 IDWD10G120C5XKSA1
- Infineon 1.2 kV 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1
- ROHM 650 V 10 A Diode SiC Schottky 3-Pin TO-220ACGE SCS310AGC16
- ROHM 650 V 12 A Diode SiC Schottky 3-Pin TO-220ACGE SCS312AGC16
- ROHM 650 V 20 A Diode SiC Schottky 3-Pin D2PAK SCS220ANHRTRL