Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220 IDH12G65C5XKSA2
- RS stock no.:
- 216-8386
- Mfr. Part No.:
- IDH12G65C5XKSA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 170,37
(exc. VAT)
R 195,926
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 662 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 85.185 | R 170.37 |
| 10 - 98 | R 83.055 | R 166.11 |
| 100 - 248 | R 80.565 | R 161.13 |
| 250 - 498 | R 77.34 | R 154.68 |
| 500 + | R 74.245 | R 148.49 |
*price indicative
- RS stock no.:
- 216-8386
- Mfr. Part No.:
- IDH12G65C5XKSA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Through Hole | |
| Product Type | SiC Schottky Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 97A | |
| Peak Reverse Current Ir | 190μA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1) | |
| Height | 29.95mm | |
| Length | 10.2mm | |
| Width | 4.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Through Hole | ||
Product Type SiC Schottky Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 97A | ||
Peak Reverse Current Ir 190μA | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1) | ||
Height 29.95mm | ||
Length 10.2mm | ||
Width 4.5 mm | ||
Automotive Standard No | ||
The Infineon CoolSiC generation 6 offers a new leading edge technology for the schottky barrier diode with current rating of 12 A. This latest generation is suitable for use in telecom SMPS and high-end servers, UPS systems, motor drives, solar inverters as well as PC silver box and lighting applications.
Best-in-class figure of merit
No reverse recovery charge
Temperature independent switching behaviour
High dv/dt ruggedness
Optimized thermal behaviour
Related links
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220
- Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP
- Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD12G65C6XTMA1
- Infineon 650 V 10 A SiC Schottky Diode Schottky 5-Pin ThinPAK 8x8
- Infineon 650 V 10 A SiC Schottky Diode Schottky 5-Pin ThinPAK 8x8 IDL10G65C5XUMA2
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD06G65C6XTMA1
- Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220