Vishay 650 V 20 A Diode Schottky 3-Pin TO-220AC 2L VS-C20ET07T-M3
- RS stock no.:
- 209-8127
- Mfr. Part No.:
- VS-C20ET07T-M3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 282,30
(exc. VAT)
R 324,64
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 936 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 141.15 | R 282.30 |
| 10 - 98 | R 137.62 | R 275.24 |
| 100 - 498 | R 133.49 | R 266.98 |
| 500 - 998 | R 128.15 | R 256.30 |
| 1000 + | R 123.025 | R 246.05 |
*price indicative
- RS stock no.:
- 209-8127
- Mfr. Part No.:
- VS-C20ET07T-M3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220AC 2L | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | VSX | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220AC 2L | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series VSX | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay 650 V Power SiC Merged PIN Schottky Diode with forward Current of 20A.
Majority carrier diode using Schottky technology on SiC wide band gap material
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behaviour
175 °C maximum operating junction temperature
MPS structure for high ruggedness to forward current surge events
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