Vishay 650 V 16 A SiC Schottky Schottky 3-Pin TO-220AC 2L VS-C16ET07T-M3
- RS stock no.:
- 209-8123
- Mfr. Part No.:
- VS-C16ET07T-M3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 260,98
(exc. VAT)
R 300,125
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 425 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 52.196 | R 260.98 |
| 10 - 95 | R 50.892 | R 254.46 |
| 100 - 245 | R 49.366 | R 246.83 |
| 250 - 495 | R 47.392 | R 236.96 |
| 500 + | R 45.496 | R 227.48 |
*price indicative
- RS stock no.:
- 209-8123
- Mfr. Part No.:
- VS-C16ET07T-M3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Mount Type | Through Hole | |
| Product Type | SiC Schottky | |
| Package Type | TO-220AC 2L | |
| Maximum Continuous Forward Current If | 16A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | VSX | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Mount Type Through Hole | ||
Product Type SiC Schottky | ||
Package Type TO-220AC 2L | ||
Maximum Continuous Forward Current If 16A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series VSX | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay 650 V Power SiC Merged PIN Schottky Diode with forward Current of 16A.
Majority carrier diode using Schottky technology on SiC wide band gap material
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behaviour
175 °C maximum operating junction temperature
MPS structure for high ruggedness to forward current surge events
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