STMicroelectronics 1200 V 20 A Diode 2-Pin D2PAK
- RS stock no.:
- 201-0893P
- Mfr. Part No.:
- STPSC20H12G-TR
- Manufacturer:
- STMicroelectronics
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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS stock no.:
- 201-0893P
- Mfr. Part No.:
- STPSC20H12G-TR
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 60μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 120A | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.3mm | |
| Standards/Approvals | RoHS | |
| Length | 15.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Reverse Current Ir 60μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 120A | ||
Maximum Operating Temperature 175°C | ||
Height 4.3mm | ||
Standards/Approvals RoHS | ||
Length 15.95mm | ||
Automotive Standard No | ||
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Low VF