onsemi 650 V 10 A Diode Schottky 2-Pin TO-247 FFSH1065B-F085
- RS stock no.:
- 189-0178
- Mfr. Part No.:
- FFSH1065B-F085
- Manufacturer:
- onsemi
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Add 120 more to save R 278,88
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R 2 788,68
(exc. VAT)
R 3 206,97
(inc. VAT)
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- Shipping from 01 March 2027
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 30 - 90 | R 92.956 | R 2,788.68 | - |
| 120 - 240 | R 90.632 | R 2,718.96 | R 278,88 |
| 270 - 480 | R 87.913 | R 2,637.39 | R 1 361,61 |
| 510 - 990 | R 84.397 | R 2,531.91 | R 4 365,09 |
| 1020 + | R 81.021 | R 2,430.63 | R 12 173,70 |
*price indicative
- RS stock no.:
- 189-0178
- Mfr. Part No.:
- FFSH1065B-F085
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.4V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 160μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 600A | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Width | 4.82mm | |
| Height | 2.82mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.4V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 160μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 600A | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Width 4.82mm | ||
Height 2.82mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
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