STMicroelectronics 1.2 kV 10 A Diode Schottky 2-Pin DO-247 LL STPSC10H12WL
- RS stock no.:
- 164-7021
- Mfr. Part No.:
- STPSC10H12WL
- Manufacturer:
- STMicroelectronics
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R 111,91
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R 128,70
(inc. VAT)
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- Final 110 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 9 | R 111.91 |
| 10 + | R 109.11 |
*price indicative
- RS stock no.:
- 164-7021
- Mfr. Part No.:
- STPSC10H12WL
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | DO-247 LL | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 420A | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Diameter | 3.56mm | |
| Height | 21.46mm | |
| Length | 16.26mm | |
| Width | 5.31mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type DO-247 LL | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 420A | ||
Peak Reverse Current Ir 400μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Diameter 3.56mm | ||
Height 21.46mm | ||
Length 16.26mm | ||
Width 5.31mm | ||
Automotive Standard No | ||
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating from -40 °C to 175 °C
Low VF
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