onsemi 60 V 6 A Diode Switching 3-Pin DPAK MBRD660CTT4G
- RS stock no.:
- 463-559
- Mfr. Part No.:
- MBRD660CTT4G
- Manufacturer:
- onsemi
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R 66,17
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R 76,10
(inc. VAT)
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- Plus 1,470 unit(s) shipping from 09 November 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 40 | R 6.617 | R 66.17 | - |
| 50 - 190 | R 6.452 | R 64.52 | R 8,25 |
| 200 - 490 | R 6.258 | R 62.58 | R 71,80 |
| 500 - 990 | R 6.008 | R 60.08 | R 304,50 |
| 1000 + | R 5.768 | R 57.68 | R 849,00 |
*price indicative
- RS stock no.:
- 463-559
- Mfr. Part No.:
- MBRD660CTT4G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 6A | |
| Peak Reverse Repetitive Voltage Vrrm | 60V | |
| Diode Configuration | Common Cathode | |
| Rectifier Type | Switching | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -65°C | |
| Maximum Forward Voltage Vf | 900mV | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 75A | |
| Peak Reverse Current Ir | 100μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Height | 2.38mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 6A | ||
Peak Reverse Repetitive Voltage Vrrm 60V | ||
Diode Configuration Common Cathode | ||
Rectifier Type Switching | ||
Pin Count 3 | ||
Minimum Operating Temperature -65°C | ||
Maximum Forward Voltage Vf 900mV | ||
Peak Non-Repetitive Forward Surge Current Ifsm 75A | ||
Peak Reverse Current Ir 100μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22mm | ||
Height 2.38mm | ||
Automotive Standard AEC-Q101 | ||
Exempt
ON Semiconductor Schottky Barrier Diodes
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more Compact size and weight are key.
• Pb-Free
• Designed for Optimal Automated Board Assembly
• Stress protection guarding
• Epoxy Moulded Case
• Lightweight 11.7mg package
Standards
Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.
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