Infineon BGSX22G5A10E6327XTSA1 RF Switch Circuit, 10-Pin ATSLP

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Subtotal (1 pack of 15 units)*

R 131,025

(exc. VAT)

R 150,675

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 8.735R 131.03
30 - 75R 8.516R 127.74
90 - 225R 8.261R 123.92
240 - 465R 7.93R 118.95
480 +R 7.613R 114.20

*price indicative

Packaging Options:
RS stock no.:
222-4790
Mfr. Part No.:
BGSX22G5A10E6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Technology

MOS Technology

Product Type

RF Switch Circuit

Package Type

ATSLP

Pin Count

10

Mount Type

Surface

Interface Type

GPIO

Operating Band 1 Frequency

0.1GHz

Minimum Supply Voltage

1.65V

Operating Band 2 Frequency

6GHz

Maximum Supply Voltage

3.6V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

RoHS and WEEE

Height

0.55mm

Length

1.5mm

Series

BGSX 22G 5A 10

Width

1.1 mm

Number of Operating Bands

2

Automotive Standard

No

The Infineon BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V.

RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm

Ultra-low insertion loss and harmonics generation

0.1 to 6.0 GHz coverage

High port-to-port-isolation

No decoupling capacitors required if no DC applied on RF lines

General Purpose Input-Output (GPIO) Interface

Small form factor 1.1mm x 1.5mm

No power supply blocking required

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