Infineon BTS50162EKAXUMA1 High Side, High Side Power Switch IC
- RS stock no.:
- 259-1495
- Mfr. Part No.:
- BTS50162EKAXUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 101,45
(exc. VAT)
R 116,668
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,388 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 50.725 | R 101.45 |
| 50 - 98 | R 49.455 | R 98.91 |
| 100 - 248 | R 47.97 | R 95.94 |
| 250 - 998 | R 46.05 | R 92.10 |
| 1000 + | R 44.21 | R 88.42 |
*price indicative
- RS stock no.:
- 259-1495
- Mfr. Part No.:
- BTS50162EKAXUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Switch IC | |
| Power Switch Topology | High Side | |
| Power Switch Type | High Side | |
| Switch On Resistance RdsOn | 16mΩ | |
| Minimum Supply Voltage | -0.3V | |
| Maximum Supply Voltage | 28V | |
| Maximum Operating Temperature | 150°C | |
| Operating Current | 12mA | |
| Minimum Operating Temperature | -40°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q100 | |
| Series | BTS5016-2EKA | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Switch IC | ||
Power Switch Topology High Side | ||
Power Switch Type High Side | ||
Switch On Resistance RdsOn 16mΩ | ||
Minimum Supply Voltage -0.3V | ||
Maximum Supply Voltage 28V | ||
Maximum Operating Temperature 150°C | ||
Operating Current 12mA | ||
Minimum Operating Temperature -40°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q100 | ||
Series BTS5016-2EKA | ||
The Infineon 16 mΩ dual channel smart high-side power switch, embedded in a PG-DSO14-40-EP, exposed pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump.
Two channel device
Very low stand by current
3.3 V and 5 V compatible logic inputs
Electrostatic discharge protection (ESD)
Optimized electromagnetic compatibility
Logic ground independent from load ground
Very low power DMOS leakage current in OFF state
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