onsemi MICROFJ-30020-TSV-TR1 Infrared Photodiode, 65 °, Surface Mount SMT
- RS stock no.:
- 185-9622
- Mfr. Part No.:
- MICROFJ-30020-TSV-TR1
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 unit)*
R 876,79
(exc. VAT)
R 1 008,31
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 4 | R 876.79 |
| 5 - 9 | R 854.87 |
| 10 - 24 | R 829.22 |
| 25 - 49 | R 796.05 |
| 50 + | R 764.21 |
*price indicative
- RS stock no.:
- 185-9622
- Mfr. Part No.:
- MICROFJ-30020-TSV-TR1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Photodiode | |
| Spectrums Detected | Infrared | |
| Wavelength of Peak Sensitivity | 970nm | |
| Package Type | SMT | |
| Mount Type | Surface Mount | |
| Packaging | Tape & Reel | |
| Number of Pins | 4 | |
| Minimum Wavelength Detected | 200nm | |
| Maximum Wavelength Detected | 900nm | |
| Typical Fall Time | 0.6ns | |
| Minimum Operating Temperature | -25°C | |
| Amplified | No | |
| Maximum Operating Temperature | 85°C | |
| Width | 3.16mm | |
| Standards/Approvals | RoHS | |
| Length | 3.16mm | |
| Height | 0.46mm | |
| Angle of Half Sensitivity | 65 ° | |
| Series | J | |
| Polarity | Forward | |
| Typical Rise Time | 0.6ns | |
| Dark Current | 1nA | |
| Breakdown Voltage | 24.7V | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Photodiode | ||
Spectrums Detected Infrared | ||
Wavelength of Peak Sensitivity 970nm | ||
Package Type SMT | ||
Mount Type Surface Mount | ||
Packaging Tape & Reel | ||
Number of Pins 4 | ||
Minimum Wavelength Detected 200nm | ||
Maximum Wavelength Detected 900nm | ||
Typical Fall Time 0.6ns | ||
Minimum Operating Temperature -25°C | ||
Amplified No | ||
Maximum Operating Temperature 85°C | ||
Width 3.16mm | ||
Standards/Approvals RoHS | ||
Length 3.16mm | ||
Height 0.46mm | ||
Angle of Half Sensitivity 65 ° | ||
Series J | ||
Polarity Forward | ||
Typical Rise Time 0.6ns | ||
Dark Current 1nA | ||
Breakdown Voltage 24.7V | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IE
High-density microcells
J-Series sensors feature ON Semiconductor's unique 'fast output' terminal
Temperature stability of 21.5 mV/°C
Exceptional breakdown voltage uniformity of ±250 mV
Available in a reflow solder compatible TSV chip-scale package
Ultra-low dark count rates of 50 kHz/mm2 typical
Optimized for high-performance timing applications, such as ToF-PET
3 mm, 4 mm and 6 mm sensor sizes
Bias voltage of <30 V
Results in a 50% photon detection efficiency (PDE) at 420 nm
Improved signal rise time and the microcell recovery time
Negates the need for active voltage control
Industry-leading uniformity
TSV package results in almost zero deadspace allowing the creation of high fill factor arrays and is ferrous-metal free
Applications
Medical Imaging
Hazard & Threat
3D Ranging & Sensing
Biophotonics & Sciences
High Energy Physics
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