DiodesZetex DMN Type N-Channel MOSFET, 28 A, 40 V Enhancement, 3-Pin TO-252 DMN4026SK3-13
- RS stock no.:
- 921-1287
- Mfr. Part No.:
- DMN4026SK3-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 199,02
(exc. VAT)
R 228,88
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 11 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 9.951 | R 199.02 |
| 100 - 480 | R 9.702 | R 194.04 |
| 500 - 980 | R 9.411 | R 188.22 |
| 1000 - 2480 | R 9.035 | R 180.70 |
| 2500 + | R 8.673 | R 173.46 |
*price indicative
- RS stock no.:
- 921-1287
- Mfr. Part No.:
- DMN4026SK3-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 32mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21.3nC | |
| Maximum Power Dissipation Pd | 3.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.2mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 6.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 32mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21.3nC | ||
Maximum Power Dissipation Pd 3.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Length 6.2mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 6.7 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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