DiodesZetex DMT6016LFDF Type N-Channel MOSFET, 11.1 A, 60 V Enhancement, 6-Pin UDFN DMT6016LFDF-7
- RS stock no.:
- 921-1170
- Mfr. Part No.:
- DMT6016LFDF-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 148,54
(exc. VAT)
R 170,82
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 260 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 7.427 | R 148.54 |
| 100 - 480 | R 7.241 | R 144.82 |
| 500 - 980 | R 7.024 | R 140.48 |
| 1000 - 2480 | R 6.743 | R 134.86 |
| 2500 + | R 6.474 | R 129.48 |
*price indicative
- RS stock no.:
- 921-1170
- Mfr. Part No.:
- DMT6016LFDF-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | UDFN | |
| Series | DMT6016LFDF | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.9W | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.58mm | |
| Standards/Approvals | No | |
| Width | 2.05 mm | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type UDFN | ||
Series DMT6016LFDF | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.9W | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Height 0.58mm | ||
Standards/Approvals No | ||
Width 2.05 mm | ||
Length 2.05mm | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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