DiodesZetex DMN4010LFG Type N-Channel MOSFET, 14.2 A, 40 V Enhancement, 8-Pin PowerDI3333 DMN4010LFG-7
- RS stock no.:
- 921-1108
- Mfr. Part No.:
- DMN4010LFG-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 199,78
(exc. VAT)
R 229,74
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 220 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 9.989 | R 199.78 |
| 100 - 480 | R 9.74 | R 194.80 |
| 500 - 980 | R 9.448 | R 188.96 |
| 1000 - 2480 | R 9.07 | R 181.40 |
| 2500 + | R 8.707 | R 174.14 |
*price indicative
- RS stock no.:
- 921-1108
- Mfr. Part No.:
- DMN4010LFG-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | DMN4010LFG | |
| Package Type | PowerDI3333 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.45W | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Forward Voltage Vf | 0.72V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.35 mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 3.35mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series DMN4010LFG | ||
Package Type PowerDI3333 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.45W | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Forward Voltage Vf 0.72V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.35 mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 3.35mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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