DiodesZetex DMN10H099SFG Type N-Channel MOSFET, 5.8 A, 100 V Enhancement, 8-Pin PowerDI3333 DMN10H099SFG-7
- RS stock no.:
- 921-1041
- Mfr. Part No.:
- DMN10H099SFG-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 206,70
(exc. VAT)
R 237,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 27 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 10.335 | R 206.70 |
| 100 - 480 | R 10.076 | R 201.52 |
| 500 - 980 | R 9.774 | R 195.48 |
| 1000 - 2480 | R 9.383 | R 187.66 |
| 2500 + | R 9.007 | R 180.14 |
*price indicative
- RS stock no.:
- 921-1041
- Mfr. Part No.:
- DMN10H099SFG-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI3333 | |
| Series | DMN10H099SFG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25.2nC | |
| Maximum Power Dissipation Pd | 2.31W | |
| Forward Voltage Vf | 0.77V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.35mm | |
| Height | 0.8mm | |
| Width | 3.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI3333 | ||
Series DMN10H099SFG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25.2nC | ||
Maximum Power Dissipation Pd 2.31W | ||
Forward Voltage Vf 0.77V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.35mm | ||
Height 0.8mm | ||
Width 3.35 mm | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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