IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin TO-247 IXFH18N100Q3

RS stock no.:: 801-1382
Mfr. Part No.:: IXFH18N100Q3
Manufacturer:: IXYS

IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin TO-247 IXFH18N100Q3

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Bulk discount available

Subtotal (1 unit)*

R 403,61

(exc. VAT)

R 464,15

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 03 August 2026

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Units	Per unit
1 - 4	R 403.61
5 - 9	R 393.52
10 - 29	R 381.71
30 - 89	R 366.44
90 +	R 351.78

*price indicative

RS stock no.:: 801-1382
Mfr. Part No.:: IXFH18N100Q3
Manufacturer:: IXYS

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	IXYS
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	1kV
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	660mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	90nC
	Forward Voltage Vf	1.4V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	830W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	5.3 mm
	Length	16.26mm
	Height	16.26mm
	Automotive Standard	No

	Select all
	Brand IXYS
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 1kV
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 660mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 90nC
	Forward Voltage Vf 1.4V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 830W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 5.3 mm
	Length 16.26mm
	Height 16.26mm
	Automotive Standard No

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS

A wide range of Advanced discrete Power MOSFET devices from IXYS

IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin TO-247 IXFH18N100Q3

FREE delivery for orders over R 1,500.00

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

MOSFET Transistors, IXYS

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