N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXYS IXFH18N100Q3

RS stock no.:: 801-1382
Mfr. Part No.:: IXFH18N100Q3
Manufacturer:: IXYS

N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXYS IXFH18N100Q3

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Bulk discount available

Price (Excl VAT) Each

R 408,80

(exc. VAT)

R 470,12

(inc. VAT)

On back order for despatch 2025/04/08

Not Available for premium delivery

RS stock no.:: 801-1382
Mfr. Part No.:: IXFH18N100Q3
Manufacturer:: IXYS

IXFT18N100Q3, IXFH18N100Q3, HiperFET Power MOSFET Q3-Class, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
ESD Control Selection Guide V1

	Units	Per unit
	1 - 4	R 408,80
	5 - 9	R 398,58
	10 - 29	R 386,62
	30 - 89	R 371,16
	90 +	R 356,31

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	1000 V
Package Type	TO-247
Series	HiperFET, Q3-Class
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	660 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	830 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	90 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	16.26mm
Number of Elements per Chip	1
Width	5.3mm
Height	16.26mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXYS IXFH18N100Q3

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series