P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB Infineon IRF5210PBF

RS stock no.:: 919-4915
Mfr. Part No.:: IRF5210PBF
Manufacturer:: Infineon

P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB Infineon IRF5210PBF

295 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (In a Tube of 50)

R 33,802

(exc. VAT)

R 38,872

(inc. VAT)

Units	Per unit	Per Tube*
50 - 50	R 33,802	R 1 690,10
100 - 150	R 32,957	R 1 647,85
200 - 450	R 31,968	R 1 598,40
500 - 950	R 30,689	R 1 534,45
1000 +	R 29,462	R 1 473,10

*price indicative

RS stock no.:: 919-4915
Mfr. Part No.:: IRF5210PBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	180 nC @ 10 V
Width	4.69mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.54mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	8.77mm

P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB Infineon IRF5210PBF

P-Channel Power MOSFET 100V to 150V, Infineon