P-Channel MOSFET, 12 A, 55 V, 3-Pin TO-220AB Infineon IRF9Z24NPBF

RS stock no.:: 919-4858
Mfr. Part No.:: IRF9Z24NPBF
Manufacturer:: Infineon

P-Channel MOSFET, 12 A, 55 V, 3-Pin TO-220AB Infineon IRF9Z24NPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

R 617 65

(exc. VAT)

R 710 30

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Units	Per unit	Per Tube**
50 - 50	R 12,353	R 617,65
100 - 150	R 12,045	R 602,25
200 - 450	R 11,683	R 584,15
500 - 950	R 11,216	R 560,80
1000 +	R 10,767	R 538,35

**price indicative

RS stock no.:: 919-4858
Mfr. Part No.:: IRF9Z24NPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 12A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRF9Z24NPBF

This high-performance MOSFET is designed for efficient power management across various applications. With a P-channel configuration, it is well-suited for controlled switching and enhanced current flow. The product plays a crucial role in driving high-power loads, ensuring consistent performance and thermal stability under challenging conditions.

Features & Benefits

• Maximum continuous drain current of 12A
• Maximum drain-source voltage of 55V
• Low RDS(on) of 175mΩ for reduced power loss
• Works with both negative and positive gate-source voltage

Applications

• Used in power management systems for automation
• Employed in switch mode power supplies for electronics
• Beneficial in audio amplifiers for improved performance
• Common in various consumer electronics for efficient energy use

What is the typical gate charge for optimal performance?

The typical gate charge is 19nC at a gate-source voltage of 10V, providing effective switching characteristics.

How does the channel type affect functionality?

As a P-channel MOSFET, it allows for better integration in high-side switching applications, expanding potential usage scenarios in power circuits.

What is the significance of the temperature range?

The operating temperature range from -55°C to +175°C ensures reliability in various environments, making it versatile for different industrial applications.

Can it be used in high-frequency switching applications?

Yes, the combination of low gate charge and resistance makes it appropriate for high-frequency applications, enhancing performance efficiency.

What considerations should be given for installation?

Ensure proper thermal management and adequate mounting to facilitate effective heat dissipation, which can enhance longevity and reliability in operation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	175 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	19 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	8.77mm