Vishay Si2328DS Type N-Channel MOSFET, 1.15 A, 100 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 919-0278
- Mfr. Part No.:
- SI2328DS-T1-E3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 reel of 3000 units)*
R 20 370,00
(exc. VAT)
R 23 430,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 17 May 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 6.79 | R 20,370.00 |
| 6000 - 6000 | R 6.62 | R 19,860.00 |
| 9000 - 15000 | R 6.422 | R 19,266.00 |
| 18000 - 24000 | R 6.165 | R 18,495.00 |
| 27000 + | R 5.918 | R 17,754.00 |
*price indicative
- RS stock no.:
- 919-0278
- Mfr. Part No.:
- SI2328DS-T1-E3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | Si2328DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 730mW | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series Si2328DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 730mW | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
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