Vishay Type N-Channel MOSFET, 4.3 A, 100 V Enhancement, 3-Pin IPAK (TO-251)
- RS stock no.:
- 918-9871
- Mfr. Part No.:
- IRLU110PBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 tube of 75 units)*
R 844,125
(exc. VAT)
R 970,725
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | R 11.255 | R 844.13 |
| 150 - 150 | R 10.974 | R 823.05 |
| 225 - 375 | R 10.645 | R 798.38 |
| 450 - 600 | R 10.219 | R 766.43 |
| 675 + | R 9.81 | R 735.75 |
*price indicative
- RS stock no.:
- 918-9871
- Mfr. Part No.:
- IRLU110PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | IPAK (TO-251) | |
| Mount Type | Through Hole, Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.76Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.5V | |
| Typical Gate Charge Qg @ Vgs | 6.1nC | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.22mm | |
| Standards/Approvals | Halogen Free According to IEC 61249-2-21, JEDEC JS709A, RoHS Directive 2002/95/EC | |
| Width | 2.38 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type IPAK (TO-251) | ||
Mount Type Through Hole, Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.76Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.5V | ||
Typical Gate Charge Qg @ Vgs 6.1nC | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 6.22mm | ||
Standards/Approvals Halogen Free According to IEC 61249-2-21, JEDEC JS709A, RoHS Directive 2002/95/EC | ||
Width 2.38 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay N-Channel MOSFET 100 V, 3-Pin IPAK IRLU110PBF
- Vishay N-Channel MOSFET 100 V, 3-Pin IPAK IRFU110PBF
- Vishay N-Channel MOSFET 100 V, 3-Pin DPAK IRFR110PBF
- Vishay N-Channel MOSFET 600 V, 3-Pin IPAK IRFU1N60APBF
- Vishay N-Channel MOSFET 500 V, 3-Pin IPAK IRFU420PBF
- Vishay N-Channel MOSFET 60 V, 3-Pin IPAK IRLU014PBF
- Vishay N-Channel MOSFET 800 V, 3-Pin IPAK SIHU4N80AE-GE3
- Vishay N-Channel MOSFET 1000 V, 3-Pin TO-247AC IRFPG40PBF
