N-Channel MOSFET, 5 A, 600 V, 3-Pin IPAK STMicroelectronics STU7NM60N
- RS stock no.:
- 168-7528
- Mfr. Part No.:
- STU7NM60N
- Manufacturer:
- STMicroelectronics
Subtotal (1 tube of 75 units)**
R 2 139 75
(exc. VAT)
R 2 460 75
(inc. VAT)
Temporarily out of stock - back order for despatch when stock is available*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Units | Per unit | Per Tube** |
---|---|---|
75 + | R 28,53 | R 2 139,75 |
**price indicative
- RS stock no.:
- 168-7528
- Mfr. Part No.:
- STU7NM60N
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 5 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | IPAK (TO-251) | |
Series | MDmesh | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 900 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 45 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
Length | 6.6mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Width | 2.4mm | |
Number of Elements per Chip | 1 | |
Height | 6.9mm | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type IPAK (TO-251) | ||
Series MDmesh | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 900 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Length 6.6mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 2.4mm | ||
Number of Elements per Chip 1 | ||
Height 6.9mm | ||