Infineon HEXFET N-Channel MOSFET, 63 A, 100 V Enhancement, 3-Pin TO-252 IRFR4510TRPBF
- RS stock no.:
- 915-5011
- Distrelec Article No.:
- 304-44-463
- Mfr. Part No.:
- IRFR4510TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 92,43
(exc. VAT)
R 106,29
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 10 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 9.243 | R 92.43 |
| 100 - 490 | R 9.012 | R 90.12 |
| 500 - 990 | R 8.742 | R 87.42 |
| 1000 - 2490 | R 8.392 | R 83.92 |
| 2500 + | R 8.056 | R 80.56 |
*price indicative
- RS stock no.:
- 915-5011
- Distrelec Article No.:
- 304-44-463
- Mfr. Part No.:
- IRFR4510TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 143W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 7.49mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 143W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 7.49mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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