Infineon CoolMOS C3 Type N-Channel MOSFET, 20.7 A, 650 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 911-4830
- Mfr. Part No.:
- SPW20N60C3FKSA1
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 tube of 30 units)*
R 1 383,51
(exc. VAT)
R 1 591,05
(inc. VAT)
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- Shipping from 03 August 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 120 | R 46.117 | R 1,383.51 |
| 150 + | R 44.964 | R 1,348.92 |
*price indicative
- RS stock no.:
- 911-4830
- Mfr. Part No.:
- SPW20N60C3FKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20.7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C3 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.95mm | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20.7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C3 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Operating Temperature 150°C | ||
Height 20.95mm | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon CoolMOS™ C3 Series MOSFET, 21A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60C3FKSA1
This MOSFET is vital for numerous electronic applications, engineered to enhance efficiency across various tasks. It performs well in high-power environments, serving the automation, electrical, and mechanical sectors. With durable specifications, it ensures stable performance while managing substantial power loads and optimising energy usage.
Features & Benefits
• N-channel configuration enhances conduction capabilities
• Maximum continuous drain current of 21A supports intensive applications
• High voltage rating of 650V provides reliability in challenging conditions
• Low gate charge facilitates efficient switching, reducing energy losses
• Excellent thermal performance allows operation at elevated temperatures
• Designed for through-hole mounting, simplifying assembly procedures
Applications
• Power supply regulation and management in industrial systems
• Motor control systems for efficient power delivery
• Utilised in DC-DC converters for high voltage
• Integrated into renewable energy systems for effective energy conversion
• Employed in power electronics for improved device performance
What is the maximum operating temperature for this component?
It operates efficiently at a maximum temperature of +150°C, suited for high-temperature environments without compromising performance.
How does the low gate charge benefit device operation?
A low gate charge enables faster switching speeds, significantly reducing switching losses and enhancing overall efficiency during operation.
Can this MOSFET handle repeated high-temperature cycling?
Yes, it is designed to maintain its electrical characteristics over numerous thermal cycles, ensuring longevity in variable temperature environments.
Is there a specific mounting style recommended for this device?
This device is intended for through-hole mounting, facilitating easier PCB assembly and providing stable mechanical connections.
What safety precautions should be taken during installation?
Ensure the gate-source voltage does not exceed specified limits (-20V to +20V) to prevent device damage, and follow standard ESD precautions to avoid static damage.
Related links
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