STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120
- RS stock no.:
- 907-4741
- Mfr. Part No.:
- SCT30N120
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 376,46
(exc. VAT)
R 432,93
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 326 unit(s) shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 29 | R 376.46 |
| 30 - 149 | R 367.05 |
| 150 - 299 | R 356.04 |
| 300 - 599 | R 341.80 |
| 600 + | R 328.13 |
*price indicative
- RS stock no.:
- 907-4741
- Mfr. Part No.:
- SCT30N120
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 270W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 3.5V | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.75mm | |
| Width | 5.15 mm | |
| Height | 20.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 270W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 3.5V | ||
Maximum Operating Temperature 200°C | ||
Length 15.75mm | ||
Width 5.15 mm | ||
Height 20.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCTWA40N120G2V-4 Type N-Channel MOSFET 1200 V, 3-Pin Hip-247
- STMicroelectronics SCTWA40N120G2V-4 Type N-Channel MOSFET 1200 V, 3-Pin Hip-247 SCTWA40N120G2V-4
- STMicroelectronics SCTW35 Type N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCTW35 Type N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247 SCTW35N65G2V
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 3-Pin Hip-247 SCTW35N65G2VAG
- STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247