Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin TDSON BSC070N10NS3GATMA1

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Subtotal (1 pack of 10 units)*

R 193,82

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R 222,89

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 19.382R 193.82
50 - 240R 18.897R 188.97
250 - 490R 18.33R 183.30
500 - 1240R 17.597R 175.97
1250 +R 16.893R 168.93

*price indicative

Packaging Options:
RS stock no.:
906-4359
Mfr. Part No.:
BSC070N10NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

63nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.1mm

Width

5.35 mm

Height

1.1mm

Standards/Approvals

No

Automotive Standard

No

Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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