STMicroelectronics MDmesh M2 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-220 STF12N60M2
- RS stock no.:
- 906-2779
- Mfr. Part No.:
- STF12N60M2
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 134,21
(exc. VAT)
R 154,34
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,755 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 26.842 | R 134.21 |
| 50 - 245 | R 26.17 | R 130.85 |
| 250 - 495 | R 25.384 | R 126.92 |
| 500 - 995 | R 24.368 | R 121.84 |
| 1000 + | R 23.394 | R 116.97 |
*price indicative
- RS stock no.:
- 906-2779
- Mfr. Part No.:
- STF12N60M2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh M2 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 25W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh M2 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 25W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 16.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STF16N60M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220