Texas Instruments NexFET Type N-Channel MOSFET, 272 A, 100 V Enhancement, 3-Pin TO-263 CSD19536KTTT

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R 96,36

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R 110,81

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1 - 9R 96.36
10 - 24R 93.95
25 - 49R 91.13
50 +R 87.48

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Packaging Options:
RS stock no.:
900-9857
Mfr. Part No.:
CSD19536KTTT
Manufacturer:
Texas Instruments
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Brand

Texas Instruments

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

272A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

NexFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

118nC

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

4.83mm

Length

10.67mm

Width

9.65 mm

Automotive Standard

No

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