Infineon SIPMOS Type P-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-252 SPD30P06PGBTMA1
- RS stock no.:
- 898-6864
- Distrelec Article No.:
- 304-44-484
- Mfr. Part No.:
- SPD30P06PGBTMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 175,35
(exc. VAT)
R 201,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 8,890 unit(s) shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 17.535 | R 175.35 |
| 50 - 240 | R 17.097 | R 170.97 |
| 250 - 490 | R 16.584 | R 165.84 |
| 500 - 1240 | R 15.921 | R 159.21 |
| 1250 + | R 15.284 | R 152.84 |
*price indicative
- RS stock no.:
- 898-6864
- Distrelec Article No.:
- 304-44-484
- Mfr. Part No.:
- SPD30P06PGBTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Not Applicable
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A Plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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