Infineon CoolMOS CFD N-Channel MOSFET, 11.4 A, 700 V, 3-Pin TO-247 IPW65R310CFDFKSA1

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Subtotal (1 pack of 3 units)*

R 61,461

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R 70,68

(inc. VAT)

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Units
Per unit
Per Pack*
3 - 3R 20.487R 61.46
6 - 27R 20.077R 60.23
30 - 57R 19.473R 58.42
60 - 147R 18.693R 56.08
150 +R 17.947R 53.84

*price indicative

Packaging Options:
RS stock no.:
897-7646
Mfr. Part No.:
IPW65R310CFDFKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS CFD

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

310 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

104.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

41 nC @ 10 V

Length

16.13mm

Maximum Operating Temperature

+150 °C

Width

21.1mm

Height

5.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Infineon CoolMOS™ CFD Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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