MPN

Toshiba TK N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK TK10P60W,RVQ(S

RS stock no.:: 896-2640
Mfr. Part No.:: TK10P60W,RVQ(S
Manufacturer:: Toshiba

Toshiba TK N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK TK10P60W,RVQ(S

Image representative of range

Currently unavailable

We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS stock no.:: 896-2640
Mfr. Part No.:: TK10P60W,RVQ(S
Manufacturer:: Toshiba

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	N
	Maximum Continuous Drain Current	9.7 A
	Maximum Drain Source Voltage	600 V
	Package Type	DPAK (TO-252)
	Series	TK
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	430 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.7V
	Maximum Power Dissipation	80 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	20 nC @ 10 V
	Length	6.6mm
	Width	7.18mm
	Number of Elements per Chip	1
	Height	2.3mm

	Select all
	Brand Toshiba
	Channel Type N
	Maximum Continuous Drain Current 9.7 A
	Maximum Drain Source Voltage 600 V
	Package Type DPAK (TO-252)
	Series TK
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 430 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.7V
	Maximum Power Dissipation 80 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 20 nC @ 10 V
	Length 6.6mm
	Width 7.18mm
	Number of Elements per Chip 1
	Height 2.3mm

COO (Country of Origin):: CN

MOSFET Transistors, Toshiba

Toshiba TK N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK TK10P60W,RVQ(S

Related links