Name: Infineon OptiMOS 3 Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-220 IPA057N06N3GXKSA1
Brand: Infineon
SKU: 892-2220
Price: 50.01 ZAR
Availability: Discontinued

Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220
	Series	OptiMOS 3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.7mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	38W
	Typical Gate Charge Qg @ Vgs	61nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	4.85 mm
	Height	16.15mm
	Standards/Approvals	No
	Length	10.65mm
	Automotive Standard	No
	Distrelec Product Id	304-44-432

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220
	Series OptiMOS 3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.7mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 38W
	Typical Gate Charge Qg @ Vgs 61nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 4.85 mm
	Height 16.15mm
	Standards/Approvals No
	Length 10.65mm
	Automotive Standard No
	Distrelec Product Id 304-44-432

Infineon OptiMOS™ 3 Series MOSFET, 60A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IPA057N06N3GXKSA1

This MOSFET is suited for a variety of high-performance applications in automation, electronics, and electrical systems. Capable of handling a maximum continuous drain current of 60A and a drain-source voltage of 60V, it plays a Crucial role in efficient power management and control. The robust design ensures stable operation under different conditions.

Features & Benefits

• N-channel configuration provides effective switching performance

• Enhancement mode operation enhances efficiency in applications

• Low RDS(on) Value of 5.7mΩ reduces power losses

• Maximum power dissipation of 38W supports high output

• Operates within a temperature range of -55°C to +175°C for diverse environments

• High gate threshold voltage of 4V ensures precise control and responsiveness

Applications

• Applicable in motor control for industrial automation

• Suitable for power supply modules in electronics

• Commonly used in inverter circuits for renewable energy systems

• Employed in automotive for effective power management

• Ideal for switching power supplies in telecommunications

What is the maximum power dissipation capability?

It can handle a maximum power dissipation of 38W, ensuring safe operation.

In which temperature range can it operate effectively?

The component reliably functions between -55°C and +175°C, making it versatile for various applications.

What is the significance of the low RDS(on) value?

A low RDS(on) Value of 5.7mΩ minimises power losses during operation, enhancing efficiency.

How does the enhancement mode contribute to its performance?

The enhancement mode allows for enhanced control and efficiency, particularly in applications requiring precise switching.

Infineon OptiMOS 3 Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-220 IPA057N06N3GXKSA1