Microchip Type P-Channel MOSFET, 175 mA, 40 V Enhancement, 3-Pin TO-92
- RS stock no.:
- 879-3270P
- Mfr. Part No.:
- TP2104N3-G
- Manufacturer:
- Microchip
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R 2 664,75
(exc. VAT)
R 3 064,50
(inc. VAT)
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- Plus 1,600 unit(s) shipping from 01 June 2026
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Units | Per unit |
|---|---|
| 250 - 475 | R 10.659 |
| 500 - 975 | R 10.339 |
| 1000 + | R 9.926 |
*price indicative
- RS stock no.:
- 879-3270P
- Mfr. Part No.:
- TP2104N3-G
- Manufacturer:
- Microchip
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 175mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 740mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.08mm | |
| Height | 5.33mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 175mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 740mW | ||
Maximum Operating Temperature 150°C | ||
Length 5.08mm | ||
Height 5.33mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.