STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 17.5 A, 950 V Enhancement, 3-Pin TO-220 STP20N95K5
- RS stock no.:
- 877-2961
- Mfr. Part No.:
- STP20N95K5
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 328,87
(exc. VAT)
R 378,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 980 unit(s) shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 65.774 | R 328.87 |
| 25 - 95 | R 64.13 | R 320.65 |
| 100 - 245 | R 62.206 | R 311.03 |
| 250 - 495 | R 59.718 | R 298.59 |
| 500 + | R 57.33 | R 286.65 |
*price indicative
- RS stock no.:
- 877-2961
- Mfr. Part No.:
- STP20N95K5
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17.5A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-220 | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 330mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Height | 15.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17.5A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-220 | ||
Series MDmesh, SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 330mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Height 15.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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