STMicroelectronics STripFET Type P-Channel MOSFET, 2 A, 30 V Enhancement, 3-Pin SOT-23 STR2P3LLH6
- RS stock no.:
- 876-5702
- Mfr. Part No.:
- STR2P3LLH6
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 301,80
(exc. VAT)
R 347,05
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,900 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 6.036 | R 301.80 |
| 100 - 100 | R 5.885 | R 294.25 |
| 150 - 150 | R 5.708 | R 285.40 |
| 200 - 200 | R 5.48 | R 274.00 |
| 250 + | R 5.261 | R 263.05 |
*price indicative
- RS stock no.:
- 876-5702
- Mfr. Part No.:
- STR2P3LLH6
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | STripFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Power Dissipation Pd | 350mW | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.3mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series STripFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Power Dissipation Pd 350mW | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.3mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics STripFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- STMicroelectronics STripFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- STMicroelectronics STripFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 STD10P6F6
- STMicroelectronics STripFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 STN3P6F6
- STMicroelectronics STripFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 STD26P3LLH6
- STMicroelectronics STripFET F6 Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 STD35P6LLF6