STMicroelectronics STripFET Type P-Channel MOSFET, 42 A, 60 V Enhancement, 8-Pin PowerFLAT STL42P6LLF6
- RS stock no.:
- 876-5685
- Mfr. Part No.:
- STL42P6LLF6
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 267,35
(exc. VAT)
R 307,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 06 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 26.735 | R 267.35 |
| 20 - 40 | R 26.067 | R 260.67 |
| 50 - 90 | R 25.285 | R 252.85 |
| 100 - 190 | R 24.274 | R 242.74 |
| 200 + | R 23.303 | R 233.03 |
*price indicative
- RS stock no.:
- 876-5685
- Mfr. Part No.:
- STL42P6LLF6
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerFLAT | |
| Series | STripFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.35mm | |
| Height | 0.95mm | |
| Width | 5.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerFLAT | ||
Series STripFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.35mm | ||
Height 0.95mm | ||
Width 5.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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