STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK

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Subtotal 20 units (supplied on a continuous strip)*

R 1 320,60

(exc. VAT)

R 1 518,60

(inc. VAT)

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Temporarily out of stock
  • Shipping from 05 April 2027
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Units
Per unit
20 - 48R 66.03
50 - 98R 64.05
100 - 248R 61.49
250 +R 59.03

*price indicative

Packaging Options:
RS stock no.:
860-7523P
Mfr. Part No.:
STH150N10F7-2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Series

DeepGate, STripFET

Package Type

H2PAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

250W

Maximum Operating Temperature

175°C

Length

10.4mm

Width

10.57mm

Standards/Approvals

No

Height

4.8mm

Automotive Standard

No

N-Channel STripFET™ DeepGate™, STMicroelectronics


STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics


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