Infineon CoolMOS E6 N-Channel MOSFET, 20 A, 700 V, 3-Pin TO-220FP IPA65R190E6XKSA1
- RS stock no.:
- 857-8615
- Mfr. Part No.:
- IPA65R190E6XKSA1
- Manufacturer:
- Infineon
Image representative of range
Subtotal (1 tube of 500 units)*
R 14 713,00
(exc. VAT)
R 16 920,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 500 + | R 29.426 | R 14,713.00 |
*price indicative
- RS stock no.:
- 857-8615
- Mfr. Part No.:
- IPA65R190E6XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | TO-220FP | |
| Series | CoolMOS E6 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 34 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 73 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.65mm | |
| Transistor Material | Si | |
| Width | 4.85mm | |
| Height | 16.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type TO-220FP | ||
Series CoolMOS E6 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 73 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.65mm | ||
Transistor Material Si | ||
Width 4.85mm | ||
Height 16.15mm | ||
Minimum Operating Temperature -55 °C | ||
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